Hess Group Alumni

Name

Year Graduated

Current Position

Dissertation

Fangyu Wu

PhD 2011

Global Foundries

Ashish Pande

PhD 2011

Intel

Balamurali Balu

PhD 2009

Intel

Plasma processing of cellulose surfaces and their interactions with fluids

Yonghao Xiu

PhD 2008

Spatial Photonics Inc

Shantanu Pathak

PhD 2008

United States Patent and Trademark Office

Characterization of plasma-polymerized polyethylene glycol-like films

Lingbo Zhu

PhD 2007

The Dow Chemical Company

Controlled fabrication of aligned carbon nanotube architectures for microelectronics packaging applications

Ingu Song

PhD 2007

Texas Instruments

Role of carbon dioxide in gas expanded liquids for removal of photoresist and etch residue

Ashwini Sinha

PhD 2006

Intel, Now with Praxair

Design and characterization of materials and processes for area selective atomic layer deposition

Prabhakar Tamirisa

PhD 2006

Excellatron LLC, Now with Medtronic, Inc.

Plasma polymerized hydrogel thin films for applications in sensors and actuators

Qian Luo

PhD 2005

Applied Materials

Chemical vapor deposition of high-k dielectrics by using different oxidants

Gelareh Shakourian

MS 2005

SNC Lavalin GDS, Inc

Enhanced de-inking and recyclability of laser printed paper by plasma-assisted fiber coating

Sudeep Vaswani

PhD 2005

Intel

Surface modification of paper and cellulose using plasma enhanced chemical vapor deposition employing fluorocarbon precursors

Jie Diao

PhD 2004

Applied Materials

Development of techniques to quantify chemical and mechanical modifications of polymer surfaces: application to chemical mechanical polishing

Satyanarayana Myneni

PhD 2004

Intel

Post plasma etch residue removal using carbon dioxide based fluids

Christopher Timmons

PhD 2004

Corning

Fluorocarbon post-etch residue removal using radical anion chemistry

Matthew Spuller

PhD 2003

Applied Materials

Resist and residue removal using gas-expanded liquids

Ebony Mays

PhD 2003

Intel

Chemical vapor deposition and characterization of zirconium tin titanate as a high dielectric constant material for potential electronic applications

Yiming Li

PhD 2002

PDF Corporation

Plasma processing of advanced interconnects for microelectronic applications

Karen Gao

MS 2000

Intel

Photoresist removal using low molecular weight alcohols and IPA-based solutions

Sairam Agraharam

PhD 2000

Intel

Plasma-assisted deposition of low dielectric constant fluorocarbon materials for microelectronic applications

Kristi Chavez

PhD 2000

Imation

Organic film and contaminant removal from surfaces in the manufacture of integrated circuits

Tazrien Kamal

PhD 2000

AMD

Development of an integrated organic film removal and surface conditioning process using low molecular weight alcohols for advanced integrated circuit (IC) fabrication